Hot electron is kind of a misnomer. Holes are the real nuisance. People generalize to "hot carrier effects". A carrier with greater than thermal. A number of 64K and K DRAMs were subjected to a voltage and temperature stress designed to accelerate hot electron effects. The access time and. Hot electron effect is caused by high electric fields in short channel mosfets. High electric fields result in high kinetic energy of electrons and some electrons may.


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Excessive substrate current may therefore be an indication of hot carrier degradation.

What does hot electron effect in mosfet mean? - Quora

In gross cases, abnormally high substrate current can upset the balance of carrier flow and facilitate latch-up. Channel carriers that travel from the source to the drain are sometimes driven towards the gate oxide even before they reach the drain because of the high gate voltage.

CHE injection involves propelling of carriers in the channel toward the oxide even before they reach the drain area; source: Hitachi Semiconductor Reliability Handbook Substrate hot electron SHE injection occurs when the substrate back bias is very positive or very negative, i.

Under this condition, carriers of one type in the substrate are driven by the substrate field toward the Si-SiO2 interface. As they move toward the substrate-oxide interface, they further gain kinetic energy from the high field in surface depletion region.

They hot electron effect overcome the surface energy barrier and get injected into the gate oxide, where some of them are trapped. SHE injection involves trapping of carriers from the substrate; source: Hitachi Semiconductor Reliability Handbook Secondary generated hot electron SGHE injection involves the generation of hot carriers from impact ionization involving a secondary carrier that was likewise created by an earlier incident of impact ionization.

This occurs under conditions similar to DAHC, i.

Hot-carrier injection - Wikipedia

The main difference, however, is the influence of the substrate's back bias in the hot carrier generation.

Consequent effects include increased leakage current and possible damage to the encasing dielectric material if the hot carrier disrupts the atomic structure of the dielectric.

Hot electrons can be created when a high-energy photon of electromagnetic radiation such as light strikes a semiconductor. The energy from the photon can be transferred to an electron, exciting the electron out of the hot electron effect band, hot electron effect forming an electron-hole pair. If the electron receives enough energy to leave the valence band, and to surpass the conduction band, it becomes a hot electron.


Such electrons are characterized by high effective temperatures. Because of hot electron effect high effective temperatures, hot electrons are very mobile, and likely to leave the semiconductor and travel into other surrounding materials.

In some semiconductor devices, the energy dissipated by hot electron phonons represents an inefficiency as energy is lost as heat.

For instance, some solar cells rely on the photovoltaic properties of semiconductors to convert light to electricity. In such cells, the hot electron effect hot electron effect the reason that a portion of the light energy is lost to heat rather than converted to electricity.

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Effects on transistors[ edit ] In MOSFETshot electrons have sufficient energy to tunnel through the thin oxide gate to show hot electron effect as gate current, or as substrate leakage current.

The hot electrons may jump from the channel region or from the drain, for instance, and into the gate or the substrate. For instance, in a MOSFET, when a gate is positive, and the switch is on, the device is designed with the intent that electrons will flow through the conductive channel to the drain.

These hot electrons do not contribute to the amount of current flowing through the channel as intended and instead are a leakage current.

Attempts to correct or compensate for the hot electron effect in a MOSFET may involve locating a diode in reverse bias at gate terminal or other manipulations of the device such as lightly doped drains or double-doped drains.

Hot electron effect electrons are accelerated in the channel, they gain energy along the mean free path.

  • What is hot electron effect
  • Hot Carriers; Hot Electrons
  • What is hot electron effect
  • Hot electron effect

This energy is lost in two different ways:

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